Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼

▼

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▼ Lower On-resistance

-150V

▼

▼

▼

▼ Simple Drive Requirement

300mΩ

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▼

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▼ Fast Switching Characteristic

-13A

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▼

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▼ RoHS Compliant

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

1.3

℃/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃/W

Data and specifications subject to change without notice

200728051-1/4

AP13P15GS/P

Rating

-150

±20

-13

0.77

Pb Free Plating Product

-8.2

Pulsed Drain Current

1

52

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

-55 to 150

Linear Derating Factor

96

-55 to 150

Parameter

Drain-Source Voltage

Gate-Source Voltage

G

D

S

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP13P15GP) are available for low-profile applications.

G

D

S

TO-263(S)

G

D

S

TO-220(P)