1.1

Characteristics (curves)

Figure 1. Maximum power dissipation versus on-state

RMS current (full cycle)

16

14

12

10

8

6

4

2

0

0

1

2

3

4

5

6

7

8

9

10

11

12

P(W)

IT(RMS)(A)

Figure 2. RMS on-state current versus case temperature

(full cycle)

0

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

25

50

75

100

125

T ( °C )

C

BTA

BTB /T 12

IT(RMS)(A)

Figure 3. RMS on-state current versus ambient

temperature (printed circuit board FR4, copper thickness:

35 μm) (full cycle)

0

25

5 0

75

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T (°C )

C

D PAK

(S = 1 cm )

2

2

IT(RMS)(A)

Figure 4. Relative variation of thermal impedance versus

pulse duration

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

1E-2

1E-1

1E+0

K = [Z /R

th

th]

tP( s)

Zth(j-c)

Zth(j-a)

BTA12, BTB12, T1205, T1210, T1235, T1250

Characteristics (curves)

DS2115 - Rev 12

page 4/16