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VND9012AJ 데이터시트(PDF) 21 Page - STMicroelectronics

부품명 VND9012AJ
상세설명  Double channel high-side driver with current sense analog feedback for automotive applications
PDF  40 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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4.1.1
Diode (DGND) in the ground line
A resistor (typ. RGND = 4.7 kΩ) should be inserted in parallel to DGND if the device drives an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence
of the ground network produces a shift (≈600 mV) in the input threshold and in the status output values if the
microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares
the same diode/resistor network.
4.2
Immunity against transient electrical disturbances
The immunity of the device against transient electrical emissions, conducted along the supply lines and injected
into the VCC pin, is tested in accordance with ISO7637-2:2011 (E) and ISO 16750-2:2010.
The related function performance status classification is shown in Table 12. ISO 7637-2 - electrical transient
conduction along supply line.
Test pulses are applied directly to DUT (device under test) both in ON and OFF-state and in accordance to ISO
7637-2:2011(E), chapter 4.
The DUT is intended as the current device only, with external components as shown in Figure 14. M0-9
application schematic.
Status II is defined in ISO 7637-1 Function Performance Status Classification (FPSC) as follows: “The function
does not perform as designed during the test but returns automatically to normal operation after the test”.
Table 12. ISO 7637-2 - electrical transient conduction along supply line
Test Pulse
2011(E)
Test pulse severity level
with Status II functional
performance status
Minimum number
of pulses or test
time
Burst cycle / pulse
repetition time
Pulse duration and
pulse generator internal
impedance
Level
US (1)
min
max
1
III
-112 V
500 pulses
0.5 s
2 ms, 10 Ω
2a
III
+55 V
500 pulses
0.2 s
5 s
50 µs, 2 Ω
3a
IV
-220 V
1h
90 ms
100 ms
0.1 µs, 50 Ω
3b
IV
+150 V
1h
90 ms
100 ms
0.1 µs, 50 Ω
4 (2)
IV
-7 V
1 pulse
100 ms, 0.01 Ω
Load dump according to ISO 16750-2:2010
Test B (3)
35 V
5 pulse
1 min
400 ms, 2 Ω
1. US is the peak amplitude as defined for each test pulse in ISO 7637-2:2011(E), chapter 5.6.
2. Test pulse from ISO 7637-2:2004(E).
3. With 35 V external suppressor referred to ground (-40°C < Tj < 150 °C).
VND9012AJ
Immunity against transient electrical disturbances
DS12727 - Rev 3
page 21/40



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