CMBTA55 datasheet(2/3 Pages) CDIL

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Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

CMBT A55

A56

Collector–base voltage (open emitter)

–VCBO

max. 60

80 V

Collector–emitter voltage (open base)

–VCEO

max. 60

80 V

Emitter–base voltage (open collector)

–VEBO

max.

Collector current (d.c.)

–I C

max.

500

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250

Storage temperature

Tstg

–55 to +150

° C

Junction temperature

max.

150

° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

500

K/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

CMBTA55

A56

–IC = 1 mA; IB = 0

–V(BR)CEOmin. 60

80 V

Emitter–base breakdown voltage

–IC = 0; IE = 100 µA–V(BR)EBO min.

Collector cut–off current

–VCE = 60 V; IB = 0

–ICEO

max.

0.1

µA

–VCB = 60 V; IE = 0

–ICBO

max. 0.1

µA

–VCB = 80 V; IE = 0

–ICBO

max.

0.1

µA

Saturation voltages

–IC = 100 mA; –IB = 10 mA

–VCEsat

max.

0.25

Base–emitter On voltage

–IC = 100 mA; –VCE = 1 V

–VBE(on) max.

1.2

D.C. current gain

–IC = 10 mA; –VCE = 1 V

hFE

min.

100

–IC = 100 mA; –VCE = 1 V

hFE

min.

100

Transition frequency at f = 100 MHz

–IC = 100 mA; –VCE = 1 V

min.

MHz

CMBTA55

CMBTA56

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