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CMBTA55 데이터시트(PDF) 1 Page - Continental Device India Limited |
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CMBTA55 데이터시트(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G ABSOLUTE MAXIMUM RATINGS CMBT A55 A56 Collector–base voltage (open emitter) –VCBO max. 60 80 V Collector–emitter voltage (open base) –VCEO max. 60 80 V Emitter–base voltage (open collector) –VEBO max. 4 V Collector current (d.c.) –I C max. 500 mA Total power dissipation up to Tamb = 25 °C Ptot 250 mW D.C. current gain –IC = 100 mA; –VCE = 1 V hFE min. 100 Transition frequency at f = 100 MHz –IC = 100 mA; –VCE = 1 V fT min. 50 MHz Collector–emitter saturation voltage –IC = 100 mA; IB = 10 mA VCEsat max. 0.25 V CMBTA55 CMBTA56 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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