FAM65V05DF1 datasheet(6/16 Pages) ONSEMI

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FAM65V05DF1

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ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

INVERTER PART (TJ as specified)

VCE(SAT)

Collector-Emitter Leakage

Current

VCC = VBS = 15 V, VIN = 5 V

IC = 50 A, TJ = 25°C

−

1.65

−

VCC = VBS = 15 V, VIN = 5 V

IC = 50 A, TJ = 125°C

−

1.9

2.4

FWD Forward Voltage

VIN = 0 V, IF = 30 A, TJ = 25°C

−

2.1

−

VIN = 0 V, IF = 30 A, TJ = 125°C

−

1.9

2.5

tON

High Side Switching Times

VPN = 300 V, VCC = VBS = 15 V

IC = 50 A

VIN = 0 V ↔ 5 V, Ls = 55 nH,

Inductive Load

TJ = 25°C (Notes 4, 5)

−

0.73

−

tC(ON)

−

0.12

−

tOFF

−

0.80

−

tC(OFF)

−

0.14

−

trr

−

0.10

−

tON

High Side Switching Times

VPN = 300 V, VCC = VBS = 15 V

IC = 50 A

VIN = 0 V ↔ 5 V, Ls = 55 nH,

Inductive Load

TJ = 125°C (Notes 4, 5)

−

0.70

−

tC(ON)

−

0.15

−

tOFF

−

0.87

−

tC(OFF)

−

0.19

−

trr

−

0.20

−

tON

Low Side Switching Times

VPN = 300 V, VCC = VBS = 15 V

IC = 50 A

VIN = 0 V ↔ 5 V, Ls = 55 nH,

Inductive Load

TJ = 25°C (Notes 4, 5)

−

0.68

−

tC(ON)

−

0.20

−

tOFF

−

0.86

−

tC(OFF)

−

0.19

−

trr

−

0.14

−

tON

Low Side Switching Times

VPN = 300 V, VCC = VBS = 15 V

IC = 50 A

VIN = 0 V ↔ 5 V, Ls = 55 nH,

Inductive Load

TJ = 125°C (Notes 4, 5)

−

0.64

−

tC(ON)

−

0.24

−

tOFF

−

0.88

−

tC(OFF)

−

0.23

−

trr

−

0.20

−

SCWT

Short Circuit Withstand Time

(Note 6)

VCC = VBS = 15 V, VPN = 450 V,

TJ = 25°C, Non−repetitive

−

ICES

Collector−Emitter Leakage

Current for IGBT and Diode

in Parallel

TJ = 25°C, VCE = 650 V

−

TJ = 125°C, VCE = 650 V

−

150

1500

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