2SC5801 datasheet(4/25 Pages) RENESAS

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Data Sheet PU10085EJ02V0DS

2SC5801

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

–

600

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

–

600

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 5 mA

100

120

145

–

RF Characteristics

Gain Bandwidth Product (1)

VCE = 1 V, IC = 5 mA, f = 2 GHz

3.0

4.5

–

GHz

Gain Bandwidth Product (2)

VCE = 1 V, IC = 15 mA, f = 2 GHz

5.0

6.5

–

GHz

Insertion Power Gain (1)

S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz

3.0

4.0

–

Insertion Power Gain (2)

S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz

4.5

5.5

–

Noise Figure

VCE = 1 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

–1.9

2.5

Reverse Transfer Capacitance

Cre

Note 2

VCB = 0.5 V, IE = 0 mA, f = 1 MHz

–

0.6

0.8

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

100 to 145

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