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2SC5801 데이터시트(PDF) 5 Page - Renesas Technology Corp

부품명 2SC5801
상세설명  NPN SILICON RF TRANSISTOR
PDF  25 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5801 데이터시트(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10085EJ02V0DS
3
2SC5801
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.8
0.6
0.4
0.2
02
3
14
5
7
68
9
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
30
40
50
10
20
0
1
2
345
6
7
IB = 40 A
µ
320 A
µ
280 A
µ
240 A
µ
200 A
µ
160 A
µ
120 A
µ
80 A
µ
360 A
µ
400 A
µ
VCE = 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE



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