DC–28 GHz GaAs MMIC Distributed Amplifier

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4.3 Bond Pad Information

The following table shows the bond pad information of the MMA040AA device.

Table 4 Bond Pad Information

Bond Pad Number

Bond Pad Name

Description

2

RFIN

This pad is DC-coupled and matched to 50 Ω.

9

RFOUT + VDD (optional)

This pin is matched to 50 Ω and can be used to bias VDD.

14

VG1

Gate control for amplifier. Adjust to achieve IDD = 60

mA.

4, 5, 6

VD1, VD1A, VD1B

Low-frequency termination. Connect bypass capacitors

per application circuit below. (no bias necessary)

11, 12

VG1A, VG1B

Low-frequency termination. Connect bypass capacitors

per application circuit below. (no bias necessary)

1, 3, 7, 8, 10, 13

GND

Die bottom must be connected to RF/DC ground.

Backside Paddle

RF/DC GND

RF/DC ground.