The following table shows the dynamic characteristics per SiC MOSFET of the MSCSM70AM10CT3AG device.

Table 3 • Dynamic Characteristics

Unit

Max

Typ

Min

Test Conditions

Characteristic

Symbol

pF

9000

VGS = 0 V

VDS = 700 V

Input capacitance

Ciss

1020

Output capacitance

Coss

f = 1 MHz

58

Reverse transfer capacitance

Crss

nC

430

VGS = –5 V/20 V

VBus = 470 V

Total gate charge

Qg

116

Gate-source charge

Qgs

ID= 80 A

70

Gate-drain charge

Qgd

ns

40

VGS = –5 V/20 V

VBus = 400 V

Turn-on delay time

Td(on)

35

Rise time

Tr

ID = 160 A; TJ = 150 °C

50

Turn-off delay time

Td(off)

RGon = 13.5 Ω; RGoff = 2.4 Ω

20

Fall time

Tf

µJ

1090

TJ = 150 °C

Inductive switching

VGS = –5 V/20 V

Turn on energy

Eon

µJ

372

TJ = 150 °C

Turn off energy

Eoff

VBus = 400 V

ID = 160 A

RGon = 13.5 Ω

RGoff = 2.4 Ω

Ω

2.8

Internal gate resistance

RGint

°C/W

0.217

Junction-to-case thermal resistance

RthJC

The following table shows the body diode ratings and characteristics per SiC MOSFET of the

MSCSM70AM10CT3AG device.

Table 4 • Body Diode Ratings and Characteristics

Unit

Max

Typ

Min

Test Conditions

Characteristic

Symbol

V

3.4

VGS = 0 V; ISD = 80 A

Diode forward voltage

VSD

3.8

VGS = –5V ; ISD = 80 A

ns

38

ISD = 80 A; VGS = –5 V

VR = 400 V; diF/dt = 2000 A/μs

Reverse recovery time

trr

nC

636

Reverse recovery charge

Qrr

A

29.6

Reverse recovery current

Irr

5

Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0

Electrical Specifications