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STM32C011F6U6 데이터시트(PDF) 40 Page - STMicroelectronics |
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STM32C011F6U6 데이터시트(HTML) 40 Page - STMicroelectronics |
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40 / 94 page ![]() Electrical characteristics STM32C011x4/x6 40/94 DS13866 Rev 3 5.3.4 Embedded voltage reference The parameters given in Table 26 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 23: General operating conditions. VBOR1 Brownout reset threshold 1 VDD rising 2.05 2.10 2.18 V VDD falling 1.95 2.00 2.08 VBOR2 Brownout reset threshold 2 VDD rising 2.20 2.31 2.38 V VDD falling 2.10 2.21 2.28 VBOR3 Brownout reset threshold 3 VDD rising 2.50 2.62 2.68 V VDD falling 2.40 2.52 2.58 VBOR4 Brownout reset threshold 4 VDD rising 2.80 2.91 3.00 V VDD falling 2.70 2.81 2.90 Vhyst_POR_PDR Hysteresis of VPOR and VPDR -- 20 - mV Vhyst_BOR Hysteresis of VBORx - - 100 - mV IDD(BOR)(1) BOR consumption - - 2.2 2.5 µA 1. Specified by design – Not tested in production. Table 25. Embedded reset and power control block characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 26. Embedded internal voltage reference Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage - 1.182 1.212 1.232 V tS_vrefint (1)(2) ADC sampling time when reading the internal reference voltage -4 - - µs tstart_vrefint(2) Start time of reference voltage buffer when ADC is enable -- 8 12 µs IDD(VREFINTBUF)(2) VREFINT buffer consumption from VDD when converted by ADC - 9 13.5 23 µA ∆VREFINT(2) Internal reference voltage spread over the temperature range VDD = 3 V - 30 50 mV TCoeff Averange temperature coefficient - - 20 70 ppm/°C ACoeff Long term stability 1000 hours, T = 25 °C - 300 1000 ppm VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200 ppm/V 1. The shortest sampling time can be determined in the application by multiple iterations. 2. Specified by design – Not tested in production. |
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