STM32U535NET3QTR datasheet(168/278 Pages) STMICROELECTRONICS

168 / 278 page

IDD(BKPSRAM)

Supply current to be

added in Standby mode

when backup SRAM is

retained

1.8

0.15

0.28

0.63

1.25

2.40

0.47

0.84

1.90

3.80

7.20

µA

2.4

0.15

0.24

0.63

1.26

2.50

0.45

0.71

1.90

3.80

7.50

3.0

0.15

0.24

0.64

1.31

2.60

0.47

0.74

2.00

4.00

7.80

3.3

0.14

0.26

0.64

1.30

2.50

0.44

0.78

2.00

3.90

7.50

3.6

0.14

0.29

0.65

1.30

2.50

0.42

0.87

2.00

3.90

7.50

IDD(SRAM2)

Supply current to be

added in Standby mode

when full SRAM2 and

BKPSRAM are retained

LDO

1.8

1.67

4.59

12.79 27.06 55.90

5.10

14.00 39.00 82.00 170.00

2.4

1.68

4.45

12.83 27.23 56.20

5.10

14.00 39.00 82.00 170.00

3.0

1.52

3.82

12.84 27.21 56.10

4.60

12.00 39.00 82.00 170.00

3.3

1.51

3.85

12.81 27.30 56.30

4.60

12.00 39.00 82.00 170.00

3.6

1.87

4.29

12.79 27.10 56.00

5.70

13.00 39.00 82.00 170.00

IDD(SRAM2_8K)

Supply current to be

added in Standby mode

when SRAM2 8-Kbyte

page 1 and BKPSRAM

are retained

1.8

0.57

1.34

4.02

8.36

17.10

1.80

4.10

13.00 26.00

52.00

2.4

0.64

1.35

4.04

8.33

17.20

2.00

4.10

13.00 25.00

52.00

3.0

0.64

1.40

4.04

8.41

17.10

2.00

4.30

13.00 26.00

52.00

3.3

0.66

1.39

3.98

8.40

17.20

2.00

4.20

12.00 26.00

52.00

3.6

0.75

1.41

3.89

8.20

16.70

2.30

4.30

12.00 25.00

51.00

Table 66. Current consumption in Standby mode (continued)

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

-VDD (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

STM32U535NET3QTR 데이터시트(PDF) 168 Page - STMicroelectronics

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