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STM32U535NET3QTR 데이터시트(PDF) 189 Page - STMicroelectronics |
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STM32U535NET3QTR 데이터시트(HTML) 189 Page - STMicroelectronics |
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189 / 278 page ![]() DS14217 Rev 1 189/278 STM32U535xx Electrical characteristics 253 5.3.8 Internal clock timing characteristics The parameters given in the table below are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 32. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 80. HSI16 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 frequency after factory calibration VDD = 3.0 V, TJ = 30 °C 15.92 16 16.08 MHz fHSI16(1) TJ = –10 °C to 100 °C, 1.58 ≤ VDD ≤ 3.6 V 15.84 - 16.16 TJ = –40 °C to 130 °C, 1.58 ≤ VDD ≤ 3.6 V 15.65 - 16.25 TRIM(2) HSI16 user trimming step - 18 29 40 kHz DuCy(HSI16)(2) Duty cycle - 45 - 55 % tsu(HSI16)(2) HSI16 oscillator startup time - - 2.5 3.6 μs tstab(HSI16)(2) HSI16 oscillator stabilization time At 1% of target frequency - 4 6 IDD(HSI16)(2) HSI16 oscillator power consumption - - 150 210 μA 1. Evaluated by characterization. Not tested in production. It does not take into account package and soldering effects. 2. Specified by design. Not tested in production. |
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