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STM32U535NET3QTR 데이터시트(PDF) 223 Page - STMicroelectronics

부품명 STM32U535NET3QTR
상세설명  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32U535NET3QTR 데이터시트(HTML) 223 Page - STMicroelectronics

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DS14217 Rev 1
223/278
STM32U535xx
Electrical characteristics
253
5.3.20
Temperature sensor characteristics
5.3.21
VCORE monitoring characteristics
5.3.22
VBAT monitoring characteristics
Table 107. Temperature sensor characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
VSENSE linearity with temperature
-
-
1.3
°C
Avg_Slope(1)
Average slope
2
2.5
3.0
mV/°C
V30(2)
Voltage at 30°C (±1 °C)
700
752
800
mV
∆(Vcontinuous -
Vsampling)(3)
Difference of voltage between continuous and
sampling modes(4)
-
-
–10/+4
tSTART
(TS_BUF)
(3)
Sensor buffer startup time
-
1
10
µs
tS_temp(3)
ADC sampling time when reading the temperature
13
-
-
IDD(TS)(3)
Temperature sensor consumption from VDD, when
selected by ADC
-14
20
µA
1. Evaluated by characterization. Not tested in production.
2. Measured at VREF+ = VDDA = 3.0 V ±10 mV. The V30 A/D conversion result is stored in the TS_CAL1 byte. Refer to
Table 16: Temperature sensor calibration values.
3. Specified by design. Not tested in production.
4. The temperature sensor is in continuous mode when the regulator is in range 1, 2 or 3. The temperature sensor is in
sampling mode when the regulator is in range 4, or when the device is in Stop 1 or Stop 2 mode.
Table 108. VCORE monitoring characteristics(1)
Symbol
Parameter
Min
Typ
Max
Unit
tS_VCORE
ADC sampling time when reading the VCORE
voltage
1-
-
µs
1. Specified by design. Not tested in production.
Table 109. VBAT monitoring characteristics(1)
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-
4 × 25.6
-
kΩ
Q
Ratio on VBAT measurement
-
4
-
-
Er(2)
Error on Q
-5
-
5
%
tS_VBAT(2)
ADC sampling time when reading the VBAT
5
-
-
µs
1. 1.58 V ≤ VBAT ≤ 3.6 V
2. Specified by design. Not tested in production.



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