STM32G0C1NET6X datasheet(71/159 Pages) STMICROELECTRONICS

71 / 159 page

DS13564 Rev 4

71/159

STM32G0C1xC/xE

Electrical characteristics

124

5.3.4

Embedded voltage reference

The parameters given in Table 27 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 24: General operating

conditions.

Figure 17. VREFINT vs. temperature

Table 27. Embedded internal voltage reference

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

-40°C < TJ < 130°C

1.182 1.212

1.232

tS_vrefint (1)

ADC sampling time when reading

the internal reference voltage

-4(2)

µs

tstart_vrefint

Start time of reference voltage

buffer when ADC is enable

12(2)

µs

IDD(VREFINTBUF)

VREFINT buffer consumption from

VDD when converted by ADC

12.5

20(2)

µA

∆VREFINT

Internal reference voltage spread

over the temperature range

VDD = 3 V

7.5(2)

TCoeff_vrefint

Temperature coefficient

50(2)

ppm/°C

ACoeff

Long term stability

1000 hours, T = 25 °C

300

1000(2)

ppm

VDDCoeff

Voltage coefficient

3.0 V < VDD < 3.6 V

250

1200(2)

ppm/V

VREFINT_DIV1

1/4 reference voltage

VREFINT

VREFINT_DIV2

1/2 reference voltage

VREFINT_DIV3

3/4 reference voltage

1. The shortest sampling time can be determined in the application by multiple iterations.

2. Guaranteed by design.

MSv40169V1

1.185

1.19

1.195

1.2

1.205

1.21

1.215

1.22

1.225

1.23

1.235

-40

-20

100

120

°C

Mean

Min

Max

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