STM32G0C1NET3 datasheet(86/159 Pages) STMICROELECTRONICS

86 / 159 page

Electrical characteristics

STM32G0C1xC/xE

86/159

DS13564 Rev 4

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 21. Typical application with a 32.768 kHz crystal

Note:

An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden

to add one.

Table 43. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)

Symbol

Parameter

Conditions(2)

Min

Typ

Max

Unit

IDD(LSE) LSE current consumption

LSEDRV[1:0] = 00

Low drive capability

-250

LSEDRV[1:0] = 01

Medium low drive capability

-315

LSEDRV[1:0] = 10

Medium high drive capability

-500

LSEDRV[1:0] = 11

High drive capability

-630

Gmcritmax

Maximum critical crystal

LSEDRV[1:0] = 00

Low drive capability

0.5

µA/V

LSEDRV[1:0] = 01

Medium low drive capability

0.75

LSEDRV[1:0] = 10

Medium high drive capability

1.7

LSEDRV[1:0] = 11

High drive capability

2.7

tSU(LSE)(3) Startup time

VDD is stabilized

1. Guaranteed by design.

2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for

ST microcontrollers”.

tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is

reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer

MS30253V2

OSC32_IN

OSC32_OUT

Drive

programmable

amplifier

fLSE

32.768 kHz

resonator

Resonator with integrated

capacitors

CL1

CL2

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