| 전자부품 데이터시트 검색엔진 |
|
AT45DB081E 데이터시트(PDF) 74 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
AT45DB081E 데이터시트(HTML) 74 Page - Renesas Technology Corp |
|
74 / 97 page ![]() DS-AT45DB081E-028 Rev. M Page 74 8/16/22 © 2022 Renesas Electronics AT45DB081E Datasheet 19.5 Program and Erase Characteristics 1. Values are based on device characterization, not 100% tested in production. 2. Not 100% tested (value guaranteed by design and characterization). Symbol Parameter 1.7 V to 3.6 V 2.3 V to 3.6 V Units Min Typ Max Min Typ Max tEP Page Erase and Programming Time (256/264 bytes) 15 55 15 55 ms tP Page Programming Time 2 4 2 4 ms tBP Byte Programming Time 8 8 µs tPE Page Erase Time 12 50 12 50 ms tBE Block Erase Time 30 75 30 75 ms tSE Sector Erase Time .7 1.3 .7 1.3 s tCE Chip Erase Time 10 20 10 20 s tSUSP Suspend Time Program 10 20 10 20 µs Erase 2040 2040 tRES Resume Time Program 3 5 3 5 µs Erase 3 5 3 5 tOTPP OTP Security Register Program Time 200 500 200 500 µs |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |