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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AT45DB081E 데이터시트(PDF) 21 Page - Renesas Technology Corp |
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AT45DB081E 데이터시트(HTML) 21 Page - Renesas Technology Corp |
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21 / 97 page  DS-AT45DB081E-028 Rev. M Page 21 8/16/22 © 2022 Renesas Electronics AT45DB081E Datasheet 7.1 Buffer Write Utilizing the Buffer Write command allows data clocked in from the SI pin to be written directly into either one of the SRAM data buffers. To load data into a buffer using the standard DataFlash buffer size (264 bytes), an opcode of 84h for Buffer 1 or 87h for Buffer 2 must be clocked into the device followed by three address bytes comprised of 15 dummy bits and nine buffer address bits (BFA8 - BFA0). The nine buffer address bits specify the first byte in the buffer to be written. To load data into a buffer using the binary buffer size (256 bytes), an opcode of 84h for Buffer 1 or 87h for Buffer 2, must be clocked into the device followed by 16 dummy bits and eight buffer address bits (BFA7 - BFA0). The eight buffer address bits specify the first byte in the buffer to be written. After the last address byte has been clocked into the device, data can then be clocked in on subsequent clock cycles. If the end of the data buffer is reached, the device wraps around back to the beginning of the buffer. Data continue to be loaded into the buffer until a low-to-high transition is detected on the CS pin. |
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