RJP4013ASP

Preliminary

R07DS1008EJ0200 Rev.2.00

Page 3 of 4

Mar 27, 2013

Application Example

CM

+

–

8

Xe Tube

Trigger Transformer

VCM

76

5

12

3

4

VCM

ICP

CM

VGE

350 V

150 A

400

µF

4 V

Maximum Operation

Conditions

IGBT driver

Precautions on Usage

1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the

device from electrostatic charge.

2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And

turn-off dv/dt must become less than 400 V/

s.

3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe  150 A :

full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over

3 seconds.