RJP4013ASP datasheet(2/5 Pages) RENESAS

부품명	RJP4013ASP

상세설명	400V, 150A, IGBT for Strobe Flash

PDF	5 Pages

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제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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RJP4013ASP

Preliminary

R07DS1008EJ0200 Rev.2.00

Page 2 of 4

Mar 27, 2013

Electrical Characteristics

(Tj = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-emitter breakdown voltage

V(BR)CES

450

—

IC = 1 mA, VGE = 0 V

Collector-emitter leakage current

ICES

—

A

VCE = 400 V, VGE = 0 V

Gate-emitter leakage current

IGES

—

10

A

VGE = 6 V, VCE = 0 V

Gate-emitter threshold voltage

VGE(th)

0.5

0.8

1.5

VCE = 10 V, IC = 1 mA

Collector-emitter saturation voltage

VCE(sat)

—

4.5

VGE = 4 V, IC = 150 A

Fall time

—

0.5

—

s

IC = 20 A, VCC = 300 V,

VGE = 5 V, RG = 30 

Resistive loads

Performance Curves

Maximum Pulse Collector Current

(Conductive Capability in Strobe Flash Circuit)

Gate - Emitter Voltage VGE (V)

100

200

150

Tc = 70°C

CM = 400µF

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