N-Channel Enhancement Mode Field Effect Transistor

CED6196/CEU6196

FEATURES

60V, 28.8A, RDS(ON) = 24mW @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

PD

IDM

60

0.28

35.7

115

±20

V

W

A

V

W/ C

1

S

G

D

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

G

G

S

S

D

D

RoHS compliant.

RDS(ON) = 30mW @VGS = 4.5V.

ID

28.8

A

Drain Current-Continuous @ TC = 25 C

@ TC = 100 C

18

A

PRELIMINARY

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Parameter

Symbol

Limit

Units

C/W

3.5

RqJC

http://www.cet-mos.com

Rev 1. 2022.July

Thermal Resistance, Junction-to-Ambient b

C/W

50

RqJA

Single Pulsed Avalanche Current e

IAS

10

A

Single Pulsed Avalanche Energy e

EAS

50

mJ

This is preliminary information on a new product in development now .

Details are subject to change without notice .