STTH812D datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

STTH812

Characteristics

3/11

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

100

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 8 A, dIF/dt = -200 A/µs,

VR = 600 V, Tj = 125° C

Softness factor

IF = 8 A, dIF/dt = -200 A/µs,

VR = 600 V, Tj = 125° C

tfr

Forward recovery time

IF = 8 A

dIF/dt = 50 A/µs

VFR = 1.5 x VFmax, Tj = 25° C

400

VFP

Forward recovery voltage

IF = 8 A, dIF/dt = 50 A/µs,

Tj = 25° C

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

456

P(W)

δ=tp/T

δ = 0.05

δ = 1

(A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

(A)

(V)

T =25°C

(maximum values)

T =150°C

(maximum values)

T =150°C

(typical values)

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

t (s)

Single pulse

TO-220AC

DPAK

TO-220Ins

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

t (s)

Single pulse

TO-220FPAC

STTH812D 데이터시트(PDF) 3 Page - STMicroelectronics

STTH812D 데이터시트(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

데이터시트 다운로드

링크 URL