STTH812D datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STTH812

4/11

Figure 5.

Peak reverse recovery current

versus dIF/dt (typical values)

Figure 6.

Reverse recovery time versus dIF/dt

(typical values)

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =600V

T =125°C

100

150

200

250

300

350

400

450

500

100

150

200

250

300

350

400

450

500

t (ns)

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =600V

T =125°C

Figure 7.

Reverse recovery charges versus

dIF/dt (typical values)

Figure 8.

Softness factor versus dIF/dt

(typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

150

200

250

300

350

400

450

500

Q (µC)

dI /dt(A/µs)

V =600V

T =125°C

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

100

150

200

250

300

350

400

450

500

S factor

2xI

T =125°C

FF(AV)

≤

V =600V

dI /dt(A/µs)

Figure 9.

Relative variations of dynamic

parameters versus junction

temperature

Figure 10.

Transient peak forward voltage

versus dIF/dt (typical values)

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

100

125

IRM

QRR

S factor

T (°C)

I=I

Reference: T =125°C

FF(AV)

V =600V

trr

100

200

300

400

500

(V)

dI /dt(A/µs)

I=I

T =125°C

FF(AV)

STTH812D 데이터시트(PDF) 4 Page - STMicroelectronics

STTH812D 데이터시트(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

데이터시트 다운로드

링크 URL