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STD16NF06L 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STD16NF06L
상세설명  N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET
PDF  11 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STD16NF06L 데이터시트(HTML) 3 Page - STMicroelectronics

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STD16NF06
2 Electrical characteristics
3/11
2
Electrical characteristics
( TCASE = 25 °C unless otherwise specified )
Table 3.
On/off states
Table 5.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 250µA
VGS= 0
60
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC=125°C
1
10
µA
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±20V
±
100
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250µA
2V
RDS(on)
Static Drain-Source On
Resistance
VGS = 10V
ID = 8A
0.060
0.070
Ω
Table 4.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs Note 5 Forward Transconductance
VDS = 25V
ID = 8A
6S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V, f = 1MHz, VGS = 0
400
103
41.5
pF
pF
pF
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =30
ID = 16A
VGS =10V
Figure 14 on page 7
14.1
2.8
5.4
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30V,
ID = 8A,
RG = 4.7Ω, VGS = 10V
Figure 13 on page 7
4
15
ns
ns
td(off)
tf
Off voltage Rise Time
FallTime
VDD = 30V,
ID = 8A,
RG = 4.7Ω, VGS = 10V
Figure 15 on page 7
16
5.5
ns
ns



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