1996 Oct 08

5

Philips Semiconductors

Product specification

NPN wideband differential transistor

BFE520

APPLICATION INFORMATION

SPICE parameters for any single BFE520 die

Note

1. These parameters have not been extracted, the

default values are shown.

SEQUENCE No.

PARAMETER

VALUE

UNIT

1

IS

1.016

fA

2

BF

220.1

−

3

NF

1.000

−

4

VAF

48.06

V

5

IKF

510.0

mA

6

ISE

283.0

fA

7

NE

2.035

−

8

BR

100.7

−

9

NR

0.988

−

10

VAR

1.692

V

11

IKR

2.352

mA

12

ISC

24.48

aA

13

NC

1.022

−

14

RB

10.00

Ω

15

IRB

1.000

µA

16

RBM

10.00

Ω

17

RE

775.3

m

Ω

18

RC

2.210

Ω

XTB

0.000

−

EG

1.110

eV

XTI

3.000

−

22

CJE

1.245

pF

23

VJE

600.0

mV

24

MJE

0.258

−

25

TF

8.616

ps

26

XTF

6.788

−

27

VTF

1.414

V

28

ITF

110.3

mA

29

PTF

45.01

deg

30

CJC

447.6

fF

31

VJC

189.2

mV

32

MJC

0.071

−

33

XCJC

0.130

−

34

TR

543.7

ps

CJS

0.000

F

VJS

750.0

mV

MJS

0.000

−

38

FC

0.780

−

Fig.2

Package equivalent circuit SOT353B

(inductance only).

handbook, halfpage

B1

B2

C1

C2

LB

LB

MBG190

LP

LP

T1

T2

LE

E

LE

LP

Fig.3

Package capacitance (fF) between

indicated nodes.

35

E

B2

C2

C1

3.5

35

2

0.4

0.8

0.6

LP

Lead inductances (nH)

LB

LE

35

36

35

2

36

15

B1

E

B2

C2

MBG191