BFE520 datasheet(3/8 Pages) PHILIPS

부품명	BFE520

상세설명	NPN wideband differential transistor

PDF	8 Pages

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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3 / 8 page

1996 Oct 08

Philips Semiconductors

Product speciﬁcation

NPN wideband differential transistor

BFE520

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Any single transistor

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

DC collector current

−

Ptot

total power dissipation

up to Ts =118 °C; note 1

−

Tstg

storage temperature

−65

+175

°C

junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction

to soldering point; note 1

single loaded

230

K/W

double loaded

115

K/W

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