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IPT012N08N5 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IPT012N08N5 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2023-05-25 2 isc N-Channel MOSFET Transistor IPT012N08N5 · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 80 - - V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2 - 4 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=150A - - 1.2 mΩ IGSS Gate Source Leakage Current VGS=±20V;VDS=0 - - ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=80V; VGS=0 - - 1 uA VSD Diode Forward Voltage IS=150A; VGS=0 - - 1.2 V Package Outlines |
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