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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IPT012N08N5 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPT012N08N5 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 2023-05-25 1 isc N-Channel MOSFET Transistor IPT012N08N5 DESCRIPTION · Drain Current –ID=300A@ TC=25℃ · Drain Source Voltage- VDSS= 80V(Min) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supplies · Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 80 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 300 A IDM Pulsed drain current @ TC=25℃ 1200 A EAS Avalanche Energy, Single Pulse ,L=0.4mH, TC=25℃ 820 mJ Ptot Power dissipation ,TC=25℃ 375 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.4 ℃ /W |
유사한 부품 번호 - IPT012N08N5 |
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유사한 설명 - IPT012N08N5 |
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