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BFG67/X 데이터시트(PDF) 8 Page - NXP Semiconductors |
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BFG67/X 데이터시트(HTML) 8 Page - NXP Semiconductors |
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8 / 16 page ![]() 1998 Oct 02 8 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR BFG67/X Noise Parameters f (MHz) VCE (V) IC (mA) 1000 8 5 Fmin (dB) Gamma (opt) Rn/50 (mag) (ang) 1.3 0.375 65.9 0.304 Fig.14 Noise circle figure. ZO =50 Ω. 0.2 0.5 1 2 5 10 ∞ 0.2 0.5 1 2 5 10 0 + j − j MBB316 Fmin 2 dB stability circle =1.3 dB OPT 0.2 1 10 5 2 0.5 3 dB 4 dB BFG67/X Noise Parameters Average Gain Parameters f (MHz) VCE (V) IC (mA) 2000 8 5 Fmin (dB) Gamma (opt) Rn/50 (mag) (ang) 2.2 0.391 136.5 0.184 GMAX (dB) Gamma (max) (mag) (ang) 12 0.839 −170 Fig.15 Noise circle figure. ZO =50 Ω. 0.2 0.5 1 2 5 10 ∞ 0.2 0.5 1 2 5 10 0 + j – j MBB315 10 15 2 0.2 0.5 3 dB 4 dB 5 dB OPT Fmin=2.2 dB Gmax 10 dB 9 dB 8 dB =12dB 11 dB |
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