BFG67SLASHX datasheet(3/16 Pages) PHILIPS

3 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistors

BFG67; BFG67/X; BFG67/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

Ptot

total power dissipation

Ts ≤ 65 °C; see Fig.3; note 1

−

380

Tstg

storage temperature range

−65

150

°C

junction temperature

−

175

°C

Fig.3 Power derating curve.

handbook, halfpage

100

200

400

300

100

200

MBC984 - 1

150

tot

(mW)

(o C)

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

note 1

290

K/W

BFG67/X 데이터시트(PDF) 3 Page - NXP Semiconductors

BFG67/X 데이터시트(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

데이터시트 다운로드

링크 URL