| 전자부품 데이터시트 검색엔진 |
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S29CD032J 데이터시트(PDF) 65 Page - SPANSION |
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S29CD032J 데이터시트(HTML) 65 Page - SPANSION |
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65 / 76 page ![]() September 27, 2006 S29CD-J_CL-J_00_B1 S29CD-J & S29CL-J Flash Family 63 Da ta Shee t (Prelim i nar y ) 18.7 Alternate CE# Controlled Erase/Program Operations Notes 1. Not 100% tested. 2. See Section 20.1 on page 69 for more information. Table 18.6 Alternate CE# Controlled Erase/Program Operations Parameter Description All Speed Options Unit JEDEC Std. tAVAV tWC Write Cycle Time (Note 1) Min 65 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 35 ns tEHDX tDH Data Hold Time Min 2 ns tGHEL tGHEL Read Recovery Time Before Write(OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tWP WE# Width Min 25 ns tELEH tCP CE# Pulse Width Min 20 ns tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Double-Word Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec tWADVS WE# Rising Edge Setup to ADV# Falling Edge Min 11.75 ns tWCKS WE# Rising Edge Setup to CLK Rising Edge Min 5 ns |
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