NAND04GW3B2B datasheet(1/58 Pages) STMICROELECTRONICS

부품명	NAND04GW3B2B

상세설명	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

PDF	58 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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1 / 58 page

PRELIMINARY DATA

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

May 2006

Rev 2

1/58

1

NAND04GW3B2B

NAND08GW3B2A

4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page

3V, NAND Flash Memories

Feature summary

■

High density NAND Flash Memory

– up to 8 Gbit memory array

– Up to 256 Mbit spare area

– Cost effective solution for mass storage

applications

■

NAND Interface

– x8 bus width

– Multiplexed Address/ Data

■

Supply voltage

– 3.0V device: VDD = 2.7 to 3.6V

■

Page size

– (2048 + 64 spare) Bytes

■

Block size

– (128K + 4K spare) Bytes

■

Page Read/Program

– Random access: 25µs (max)

– Sequential access: 30ns (min)

– Page program time: 200µs (typ)

■

Copy Back Program mode

– Fast page copy without external buffering

■

Cache Program and Cache Read modes

– Internal Cache Register to improve the

program and read throughputs

■

Fast Block Erase

– Block erase time: 2ms (typ)

■

Status Register

■

Electronic Signature

■

Chip Enable ‘don’t care’

– for simple interface with microcontroller

■

Serial Number option

■

Data protection

– Hardware and Software Block Locking

– Hardware Program/Erase locked during

Power transitions

■

Data integrity

– 100,000 Program/Erase cycles

– 10 years Data Retention

■

ECOPACK® package

■

Development tools

– Error Correction Code software and

hardware models

– Bad Blocks Management and Wear

Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

TSOP48 12 x 20mm

www.st.com

유사한 부품 번호 - NAND04GW3B2B

제조업체	부품명	데이터시트	상세설명
Numonyx B.V	NAND04GW3B2B	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND04GW3B2BN1E	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND04GW3B2BN1F	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND04GW3B2BN6E	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND04GW3B2BN6F	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

More results

유사한 설명 - NAND04GW3B2B

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	NAND01G-B	631Kb / 64P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 13-Feb-2006
STMicroelectronics	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 23-Nov-2006
Numonyx B.V	NAND01G-B2B	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
	NAND02G-B2D	1Mb / 69P	2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
	NAND04GW3B2B	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND04G-B2D	1Mb / 69P	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
	NAND08GW3C2A	1Mb / 58P	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND08GW3C2B	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND01GR3B2C	1Mb / 67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5
STMicroelectronics	NAND512-B	383Kb / 59P	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 25-Feb-2005

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NAND04GW3B2B 데이터시트(HTML) 1 Page - STMicroelectronics

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