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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRGPC40K 데이터시트(PDF) 2 Page - International Rectifier |
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IRGPC40K 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRGPC40K Notes: VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω, ( See fig. 13a ) Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 61 92 IC = 25A Qge Gate - Emitter Charge (turn-on) ---- 13 19 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 22 33 VGE = 15V td(on) Turn-On Delay Time ---- 35 ---- TJ = 25°C tr Rise Time ---- 27 ---- ns IC = 25A, VCC = 480V td(off) Turn-Off Delay Time ---- 160 240 VGE = 15V, RG = 10Ω t f Fall Time ---- 130 200 Energy losses include "tail" Eon Turn-On Switching Loss ---- 0.52 ---- Eoff Turn-Off Switching Loss ---- 1.2 ---- mJ See Fig. 9, 10, 11, 14 Ets Total Switching Loss ---- 1.7 2.6 tsc Short Circuit Withstand Time 10 ---- ---- µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10 Ω, VCPK < 500V td(on) Turn-On Delay Time ---- 34 ---- TJ = 150°C, tr Rise Time ---- 28 ---- ns IC = 25A, VCC = 480V td(off) Turn-Off Delay Time ---- 300 ---- VGE = 15V, RG = 10Ω t f Fall Time ---- 310 ---- Energy losses include "tail" Ets Total Switching Loss ---- 3.6 ---- mJ See Fig. 10, 14 LE Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package Cies Input Capacitance ---- 1500 ---- VGE = 0V Coes Output Capacitance ---- 190 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 17 ---- ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 ---- ---- V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage---- 0.46 ---- V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 2.1 3.2 IC = 25A VGE = 15V ---- 2.8 ---- V IC = 42A See Fig. 2, 5 ---- 2.5 ---- IC = 25A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 7.0 14 ---- S VCE = 100V, IC = 25A ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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