IRGPC40K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

------

------

0.77

Case-to-Sink, flat, greased surface

------

0.24

------

°C/W

Junction-to-Ambient, typical socket mount

------

------

40

Wt

Weight

------

6 (0.21)

------

g (oz)

Features

• Switching-loss rating includes all "tail" losses

• Optimized for high operating frequency (over

5kHz)

See Fig. 1 for Current vs. Frequency

curve

≤ 3.2V

E

C

G

n-channel

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V

Continuous Collector Current

42

Continuous Collector Current

25

A

Pulsed Collector Current



84

Clamped Inductive Load Current

‚

84

Short Circuit Withstand Time

10

µs

Gate-to-Emitter Voltage

±20

V

Reverse Voltage Avalanche Energy

ƒ

15

mJ

Maximum Power Dissipation

160

W

Maximum Power Dissipation

65

Operating Junction and

-55 to +150

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

TO -24 7AC

PD - 9.1077

Thermal Resistance

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier

have higher usable current densities than comparable bipolar transistors,

while at the same time having simpler gate-drive requirements of the

familiar power MOSFET. They provide substantial benefits to a host of

high-voltage, high-current applications.

These new short circuit rated devices are especially suited for motor

control and other applications requiring short circuit withstand capability.

Description