BLF2047LSLASH90 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Dec 06

Philips Semiconductors

Product speciﬁcation

UHF power LDMOS transistor

BLF2047L

handbook, halfpage

100

MGS950

(dB)

PL (PEP) (W)

(%)

Fig.2

Power gain and drain efficiency as a

function of load power; typical values.

f1 = 2000 MHz; f2 = 2000.1 MHz; VDS =26V;

IDQ = 350 mA; Th ≤ 25 °C.

handbook, halfpage

−20

−40

−60

−10

−30

−50

MGS951

100

PL (PEP) (W)

dim

(dBc)

f1 = 2000 MHz; f2 = 2000.1 MHz; VDS =26V;

IDQ = 350 mA; Th ≤ 25 °C.

Fig.3

Intermodulation distortion as a function of

load power; typical values.

handbook, halfpage

1.6

1.8

2.4

−2

MGS952

2.2

(

Ω)

f (GHz)

Fig.4

Input impedance as a function of frequency

(series components); typical values.

VDS = 26 V; ID = 350 mA; PL = 65 W; Th ≤ 25 °C.

handbook, halfpage

1.6

1.8

2.4

−6

MGS953

2.2

−2

−4

(

Ω)

f (GHz)

Fig.5

Load impedance as a function of frequency

(series components); typical values.

VDS = 26 V; ID = 350 mA; PL = 65 W; Th ≤ 25 °C.

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