1999 Dec 06

2

Philips Semiconductors

Product specification

UHF power LDMOS transistor

BLF2047L

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (1.8 to 2 GHz)

• Internal input and output matching for high gain and

efficiency.

APPLICATIONS

• Common source class-AB operation for PCN and PCS

applications in the 1800 to 2000 MHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS

transistors encapsulated in a 2-lead SOT502A flange

package with a ceramic cap. The common source is

connected to the mounting flange.

PINNING

PIN

DESCRIPTION

1

drain

2

gate

3

source, connected to flange

handbook, halfpage

Top view

MBK394

1

2

3

Fig.1 Simplified outline SOT502A.

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

η

D

(%)

(dBc)

Two-tone, class-AB

26

65 (PEP)

>10.5

>30

≤−25

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−±15

V

DC drain current

−

9A

storage temperature

−65

+150

°C

junction temperature

−

200

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.