1998 Jan 21

2

Philips Semiconductors

Product specification

UHF power MOS transistor

BLF544

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability

• Designed for broadband operation.

APPLICATIONS

• Communication transmitters in the UHF frequency

range.

DESCRIPTION

N-channel enhancement mode vertical D-MOS power

transistor encapsulated in a 6-lead, SOT171A flange

package with a ceramic cap. All leads are isolated from the

flange.

information is provided for matched pair applications.

PINNING - SOT171A

PIN

SYMBOL

DESCRIPTION

1

s

source

2

s

source

3

g

gate

4

d

drain

5

s

source

6

s

source

Fig.1 Simplified outline and symbol.

handbook, halfpage

s

d

g

MAM390

1

2

3

4

5

6

Top view

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

500

28

20

>11

>50

CW, class-B

960

28

20

typ. 7

typ. 50

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.