1998 Jan 21

3

Philips Semiconductors

Product specification

UHF power MOS transistor

BLF544

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−±20

V

drain current (DC)

−

3.5

A

total power dissipation

−

48

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to mounting base

3.7

K/W

thermal resistance from mounting base to heatsink

0.4

K/W

Fig.2 DC SOAR.

handbook, halfpage

1

10

110

(1)

ID

(A)

VDS (V)

MRA992

(2)

Fig.3 Power/temperature derating curves.

(1) Short-time operation during mismatch.

(2) Continuous operation.

handbook, halfpage

0

(1)

(2)

40

80

Ptot

(W)

160

60

20

0

40

120

MBK442

Th ( °C)