BLV21 datasheet(3/11 Pages) PHILIPS

3 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLV21

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE = 0)

peak value

VCESM

max.

65 V

Collector-emitter voltage (open base)

VCEO

max.

36 V

Emitter-base voltage (open collector)

VEBO

max.

4 V

Collector current (average)

IC(AV)

max.

1,75 A

Collector current (peak value); f

> 1 MHz

ICM

max.

5,0 A

R.F. power dissipation (f

> 1 MHz); Tmb =25 °CPrf

max.

36 W

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

handbook, halfpage

1.5

0.5

MGP283

(A)

VCE (V)

Th = 70 °C

Tmb = 25 °C

Fig.3

R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz.

I Continuous d.c. operation

II Continuous r.f. operation

III Short-time operation during mismatch

handbook, halfpage

100

MGP284

Ptot

(W)

Th (°C)

derate by 0.2 W/K

0.16 W/K

ΙΙ

ΙΙΙ

THERMAL RESISTANCE

(dissipation = 15 W; Tmb = 74,5 °C, i.e. Th =70 °C)

From junction to mounting base (d.c. dissipation)

Rth j-mb(dc)

6,55 K/W

From junction to mounting base (r.f. dissipation)

Rth j-mb(rf)

4,95 K/W

From mounting base to heatsink

Rth mb-h

0,3 K/W

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