FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKBA4204

Dual N-Channel Enhancement Mode MOSFET

11

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current1

30

A

ID@TC=100℃

Continuous Drain Current1

20

A

ID@TA=25℃

Continuous Drain Current1

9.6

A

ID@TA=70℃

Continuous Drain Current1

8

A

IDM

Pulsed Drain Current2

100

A

EAS

Single Pulse Avalanche Energy3

31

mJ

IAS

Avalanche Current

25

A

PD@TC=25℃

Total Power Dissipation4

20.8

W

PD@TA=25℃

Total Power Dissipation4

2

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient 1

---

62.5

℃/W

RθJC

Thermal Resistance Junction-Case1

---

6

℃/W

BVDSS

RDSON

ID

40V

15

mΩ

30A

Absolute Maximum Ratings

Thermal Data

The FKBA4204 is the high cell density trenched

N-ch MOSFETs, which provide excellent RDSON

and gate charge for most applications.

The FKBA4204 meet the RoHS and Green

Product requirement, 100% EAS guaranteed with

full function reliability approved.

Description

Product Summary

 100% EAS Guaranteed

 Green Device Available

 Super Low Gate Charge

 Excellent CdV/dt effect decline

 Advanced high cell density Trench

technology

PRPAK5X6 Pin Configuration