FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKBA4204

Dual N-Channel Enhancement Mode MOSFET

33

0

2

4

6

8

10

12

0

0.25

0.5

0.75

1

VDS , Drain-to-Source Voltage (V)

VGS=10V

VGS=7V

VGS=5V

VGS=4.5V

VGS=3V

10

14

18

22

2

4

6

8

10

VGS (V)

ID=6A

0

2

4

6

0.00

0.25

0.50

0.75

1.00

VSD , Source-to-Drain Voltage (V)

TJ=150℃

TJ=25℃

0

2

4

6

8

10

0

5

10

15

20

25

QG , Total Gate Charge (nC)

VDS=20V

ID=6A

0.2

0.6

1

1.4

1.8

-50

0

50

100

150

TJ ,Junction Temperature (℃ )

0.2

0.6

1.0

1.4

1.8

-50

0

50

100

150

TJ , Junction Temperature (℃)

Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs G-S Voltage

Fig.3 Source Drain Forward Characteristics

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs TJ

Fig.6 Normalized RDSON vs TJ