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TC1017-1.8VCT 데이터시트(PDF) 13 Page - Microchip Technology

부품명 TC1017-1.8VCT
상세설명  150 mA, Tiny CMOS LDO With Shutdown
PDF  22 Pages
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제조업체  MICROCHIP [Microchip Technology]
홈페이지  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

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 2003 Microchip Technology Inc.
DS21813B-page 13
TC1017
FIGURE 5-2:
Maximum Current vs.
Ambient Temperature (SC-70 package).
5.3
Power Dissipation: SOT-23
The TC1017 is also available in a SOT-23 package for
improved thermal performance. The thermal resistance
for the SOT-23 package is approximately 255°C/W
when the copper area used in the printed circuit board
layout is similar to the JEDEC J51-7 low thermal
conductivity standard or semi-G42-88 standard. For
applications with larger or thicker copper area, the
thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application”, DS00792, for a method to
determine the thermal resistance for a particular
application.
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steady-
state junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION:
The V
IN x IGND term is typically very small when
compared to the (V
IN-VOUT) x ILOAD term, simplifying the
power dissipation within the LDO to be:
EQUATION:
To determine the maximum power dissipation
capability, the following equation is used:
EQUATION:
Given the following example:
Find:
1.
Internal power dissipation:
2.
Maximum allowable ambient temperature:
3.
Maximum allowable power dissipation at
desired ambient:
In this example, the TC1017 dissipates approximately
158.5 mWatts and the junction temperature is raised
40.5°C over the ambient. The absolute maximum
power dissipation is 157 mW when given a maximum
ambient temperature of +85°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-3 and Figure 5-4 depict typical maximum
power dissipation versus ambient temperature and
typical maximum current versus ambient temperature
with a one volt input voltage to output voltage
differential, respectively.
0
20
40
60
80
100
120
140
160
-40
-15
10
35
60
85
110
Ambient Temperature (°C)
VIN - VOUT = 1V
PD
VIN VOUT
() ILOAD VIN IGND
×
+
×
=
PD
VIN VOUT
() ILOAD
×
=
VIN =
3.0V to 4.1V
VOUT =
2.85V ±2.5%
ILOAD =
120 mA (output current)
TA =
+85°C (max. desired ambient)
PDMAX
TJ_MAX TA_MAX
()
R
θJA
-------------------------------------------------
=
Where:
TJ_MAX = the maximum junction
temperature allowed
TA_MAX = the maximum ambient
temperature
R
θJA = the thermal resistance from
junction to air
PDMAX
VIN_MAX VOUT_MIN
() ILOAD
×
=
4.1V 2.85
0.975
()
×
() 120mA
×
=
158.5mW
=
TA_MAX
TJ_MAX P
DMAX
R
θJA
×
=
125
°C 158.5mW 255°C/W
×
()
=
84.5
°C
=
125
°C40.5°C
()
=
PD
TJ_MAX TA
R
θJA
------------------------------
=
157mW
=
125
°C85°C
255
°C/W
-----------------------------------
=



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