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STTH2002D 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STTH2002D
상세설명  Ultrafast recovery diode
PDF  10 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STTH2002D 데이터시트(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH2002
4/10
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
10
100
1000
1
10
100
1000
C(pF)
F=1MHz
V
osc=30mVRMS
T
j=25°C
VR(V)
0
50
100
150
200
250
300
350
400
10
100
1000
Q
RR(nC)
I
F = 20 A
V
R = 160 V
T
j=125 °C
T
j=25 °C
dIF/dt(A/µs)
Figure 7.
Reverse recovery time versus
dIF/dt (typical values)
Figure 8.
Peak reverse recovery current
versus dIF/dt (typical values)
Figure 9.
Dynamic parameters versus
junction temperature
Figure 10.
Thermal resistance, junction to
ambient, versus copper surface
under tab (Epoxy printed circuit
board FR4, ecu = 35 µm) for D
2PAK
0
10
20
30
40
50
60
70
80
10
100
1000
t
RR(ns)
I
F=20A
V
R=160V
T
j = 125 °C
T
j = 25 °C
dIF/dt(A/µs)
0
2
4
6
8
10
12
14
16
18
20
10
100
1000
I
RM(A)
I
F= 20 A
V
R= 160 V
T
j=125 °C
T
j=25 °C
dIF/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
RR;IRM [Tj]/ QRR;IRM [Tj=125°C]
I
RM
Q
RR
I
F=20 A
V
R= 160 V
Tj(°C)
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
R
th(j-a)(°C/W)
D²PAK
SCU(cm²)



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