Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2522DF

Fig.13. Transient thermal impedance.

Z

Fig.14. Reverse bias safe operating area. T

Fig.15. Forward bias safe operating area. T

I

Second-breakdown limits independant of temperature.

Mounted with heatsink compound.

1E-06

1E-04

1E-02

1E+00

t / s

Zth / (K/W)

D = 0

0.02

0.05

0.1

0.2

0.5

D =

T

T

P

t

D

10

1

0.1

0.01

0.001

BU2520AF

IC / A

100

10

1

0.1

0.01

1

10

100

1000

VCE / V

100 us

1 ms

10 ms

DC

30 us

tp =

Ptot

ICM

ICDC

= 0.01

BU2522AF

0

30

20

10

0

500

1000

1500

VCE / V

IC / A

September 1997

5

Rev 1.200