BU2522DF datasheet(3/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2522DF

Fig.1. Switching times waveforms (64 kHz).

Fig.2. Switching times definitions.

Fig.3. Switching times test circuit.

Fig.4. Test Circuit RBSOA. V

CC = 140 V; -VBB = 4 V;

C = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH;

FB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A

Fig.5. Typical DC current gain. h

FE = f (IC)

parameter V

Fig.6. Typical base-emitter saturation voltage.

BEsat = f (IC); parameter IC/IB

ICsat

end

16 us

6.5 us

5 us

TRANSISTOR

DIODE

I C

I B

IBend

-VBB

T.U.T.

VCC

VCL

CFB

Rbe

ICsat

90 %

10 %

IBend

- IBM

0.1

IC / A

hFE

100

Tj = 25 C

Tj = 125 C

5 V

1 V

+ 150 v nominal

adjust for ICsat

Cfb

D.U.T.

IBend

-VBB

Rbe

0.1

IC / A

VBESAT / V

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

IC/IB=

September 1997

Rev 1.200

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