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UPD75P3036 데이터시트(PDF) 39 Page - Renesas Technology Corp

부품명 UPD75P3036
상세설명  MOS INTEGRATED CIRCUIT
PDF  67 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
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UPD75P3036 데이터시트(HTML) 39 Page - Renesas Technology Corp

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µPD75P3036
37
Data Sheet U11575EJ1V1DS
Subsystem Clock Oscillation Circuit Characteristics (TA = –40 to +85
°C, VDD = 1.8 to 5.5 V)
Resonator
Recommended
Parameter
Conditions
MIN.
TYP.
MAX.
Unit
Constants
Crystal
Oscillation frequency
32
32.768
35
kHz
resonator
(fXT)Note 1
Oscillation
VDD = 4.5 to 5.5 V
1.0
2
s
stabilization timeNote 2
10
External
XT1 input frequency
32
100
kHz
clock
(fXT)Note 1
XT1 input high-,
5
15
µs
low-level widths
(tXTH, tXTL)
Notes 1.
The oscillation frequency shown above indicate characteristics of the oscillation circuit only. For the
instruction execution time, refer to AC Characteristics.
2.
The oscillation stabilization time is the time required for oscillation to be stabilized after VDD has been
applied.
Caution When using the subsystem clock oscillation circuit, wire the portion enclosed in the dotted line
in the above figure as follows to prevent adverse influence due to wiring capacitance:
•
Keep the wiring length as short as possible.
•
Do not cross the wiring with other signal lines.
•
Do not route the wiring in the vicinity of a line through which a high alternating current flows.
•
Always keep the ground point of the capacitor of the oscillation circuit at the same potential
as VDD.
•
Do not ground to a power supply pattern through which a high current flows.
•
Do not extract signals from the oscillation circuit.
The subsystem clock oscillation circuit has a low amplification factor to reduce current
dissipation and is more susceptible to noise than the main system clock oscillation circuit.
Therefore, exercise utmost care in wiring the subsystem clock oscillation circuit.
XT1
XT2
C3
C4
VDD
R
XT1
XT2



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