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UPD75P3036 데이터시트(PDF) 39 Page - Renesas Technology Corp |
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UPD75P3036 데이터시트(HTML) 39 Page - Renesas Technology Corp |
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39 / 67 page ![]() µPD75P3036 37 Data Sheet U11575EJ1V1DS Subsystem Clock Oscillation Circuit Characteristics (TA = –40 to +85 °C, VDD = 1.8 to 5.5 V) Resonator Recommended Parameter Conditions MIN. TYP. MAX. Unit Constants Crystal Oscillation frequency 32 32.768 35 kHz resonator (fXT)Note 1 Oscillation VDD = 4.5 to 5.5 V 1.0 2 s stabilization timeNote 2 10 External XT1 input frequency 32 100 kHz clock (fXT)Note 1 XT1 input high-, 5 15 µs low-level widths (tXTH, tXTL) Notes 1. The oscillation frequency shown above indicate characteristics of the oscillation circuit only. For the instruction execution time, refer to AC Characteristics. 2. The oscillation stabilization time is the time required for oscillation to be stabilized after VDD has been applied. Caution When using the subsystem clock oscillation circuit, wire the portion enclosed in the dotted line in the above figure as follows to prevent adverse influence due to wiring capacitance: • Keep the wiring length as short as possible. • Do not cross the wiring with other signal lines. • Do not route the wiring in the vicinity of a line through which a high alternating current flows. • Always keep the ground point of the capacitor of the oscillation circuit at the same potential as VDD. • Do not ground to a power supply pattern through which a high current flows. • Do not extract signals from the oscillation circuit. The subsystem clock oscillation circuit has a low amplification factor to reduce current dissipation and is more susceptible to noise than the main system clock oscillation circuit. Therefore, exercise utmost care in wiring the subsystem clock oscillation circuit. XT1 XT2 C3 C4 VDD R XT1 XT2 |
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