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BU506DF 데이터시트(PDF) 7 Page - NXP Semiconductors |
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BU506DF 데이터시트(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page ![]() 1997 Aug 14 6 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 2; Tj =25 °C. handbook, halfpage 2 0 10−2 10−1 110 MGB886 1 VCEsat (V) IC (A) Fig.9 Base-emitter saturation voltage as a function of base current; typical values. Tj =25 °C. (1) IC =3A. (2) IC =2A. (3) IC =1A. handbook, halfpage MGB901 03 1.2 0 0.8 0.4 2 1 VBEsat (V) IB (A) (1) (2) (3) Fig.10 DC current gain; typical values. VCE = 5 V; Tj =25 °C. handbook, halfpage 10−2 10−1 1 102 10 1 hFE IC (A) 10 MGB877 Fig.11 Switching time waveforms. handbook, halfpage MBH382 time time IB (end) 10% 90% ts tf iC ICsat iB |
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