1997 Aug 14

1

Philips Semiconductors

Product specification

Silicon diffused power transistors

BU506F; BU506DF

DESCRIPTION

High-voltage, high-speed switching

NPN power transistor in a SOT186

package. The BU506DF has an

integrated efficiency diode.

APPLICATIONS

• Horizontal deflection circuits of

colour television receivers

• Line-operated switch-mode

applications.

PINNING

DESCRIPTION

1

base

2

collector

3

emitter

Note

1. All pins electrically isolated from mounting base.

Fig.1 Simplified outline (SOT186) and symbols.

MBC668

123

Front view

3

2

1

MBB077

3

2

1

MBB008

a. BU506F.

b. BU506DF.

QUICK REFERENCE DATA

THERMAL CHARACTERISTICS

Notes

1. Mounted without heatsink compound and 30

±5 N force on centre of package.

2. Mounted with heatsink compound and 30

±5 N force on centre of package.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

collector-emitter peak voltage

−

1500

V

collector-emitter voltage

open base

−

700

V

collector-emitter saturation voltage

−

1V

diode forward voltage (BU506DF)

1.5

2.2

V

collector saturation current

−

3A

collector current (DC)

see Figs 2 and 3

−

5A

collector current (peak value)

see Figs 2 and 3

−

8A

total power dissipation

−

20

W

fall time

inductive load; see Fig.11

0.7

−µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to external heatsink note 1

6.35

K/W

note 2

3.85

K/W

thermal resistance from junction to ambient

55

K/W