Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DX

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

1

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut off current

V

-

-

10

mA

V

CEOsust

Collector-emitter sustaining voltage

I

700

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltages I

-

-

1.0

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.3

V

h

FE

DC current gain

I

6

13

30

V

F

Diode forward voltage

I

-

1.6

2.0

V

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

f

T

Transition frequency at f = 5 MHz

I

7

-

MHz

C

C

Collector capacitance at f = 1MHz

V

125

-

pF

Switching times (16 kHz line

I

deflection circuit)

I

-I

t

s

Turn-off storage time

6.5

-

µs

t

f

Turn-off fall time

0.7

-

µs

1 Measured with half sine-wave voltage (curve tracer).

July 1998

2

Rev 1.200