Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DX

Fig.5. Typical collector-emitter saturation voltage.

V

Fig.6. Typical base-emitter saturation voltage.

V

Fig.7. Typical collector-emitter saturation voltage.

V

Fig.8. Normalised power dissipation.

PD% = 100

⋅P

BU508AD

0.1

1

10

0

0.2

0.4

0.6

0.8

1

IC / A

VCESAT / V

0.1

0.3

0.5

0.7

0.9

BU508AD

0.1

1

10

0.1

1

10

IC = 4.5A

IC = 6A

IC = 3A

VCESAT/V

IB/A

0

123

4

0.6

0.8

1

1.2

1.4

IC = 6A

IC = 4.5A

IC = 3A

IB / A

VBESAT / V

BU508AD

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

July 1998

4

Rev 1.200